document number: 93222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 26-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 1 fast soft recovery rectifier diode, 20 a 20ETF10FPpbf, 20etf12fppbf soft recovery series vishay semiconductors features ? the fully isolated package (v ins = 2500 v rms ) is ul e78996 approved ? designed and qualified for industrial level applications ? output rectification and freewheeling in inverters, choppers and converters ? input rectifications wher e severe restrictions on conducted emi should be met description the 20etf..fppbf fast soft r ecovery rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. the glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. product summary v f at 20 a < 1.31 v i fsm 355 a v rrm 1000 v to 1200 v anode 1 2 3 cathode base cathode to-220ac full-pak major ratings and characteristics symbol characteristics values units v rrm 1000 to 1200 v i f(av) sinusoidal waveform 20 a i fsm 355 t rr 1 a, 100 a/s 95 ns v f 20 a, t j = 25 c 1.31 v t j range - 40 to 150 c voltage ratings part number v rrm , maximum peak reverse voltage v v rsm , maximum non-repetitive peak reverse voltage v i rrm at 150 c ma 20ETF10FPpbf 1000 1100 6 20etf12fppbf 1200 1300 absolute maximum ratings parameter symbol test conditions values units maximum average forward current i f(av) t c = 97 c, 180 conduction half sine wave 20 a maximum peak one cycle non-repetitive surge current i fsm 10 ms sine pulse, rated v rrm applied 300 10 ms sine pulse, no voltage reapplied 355 maximum i 2 t for fusing i 2 t 10 ms sine pulse, rated v rrm applied 450 a 2 s 10 ms sine pulse, no voltage reapplied 635 maximum i 2 ? t for fusing i 2 ? t t = 0.1 ms to 10 ms, no voltage reapplied 6350 a 2 ? s * pb containing terminations are not rohs compliant, exemptions may apply
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93222 2 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 26-jul-10 20ETF10FPpbf, 20etf12fppbf soft recovery series vishay semiconductors fast soft recovery rectifier diode, 20 a electrical specifications parameter symbol test conditions values units maximum forward voltage drop v fm 20 a, t j = 25 c 1.31 v forward slope resistance r t t j = 150 c 11.88 m ? threshold voltage v f(to) 0.93 v maximum reverse leakage current i rm t j = 25 c v r = rated v rrm 0.1 ma t j = 150 c 6 recovery characteristics parameter symbol test conditions values units reverse recovery time t rr i f at 20 apk 25 a/s 25 c 400 ns reverse recovery current i rr 6.1 a reverse recovery charge q rr 1.7 c snap factor s typical 0.6 thermal - mechanical specifications parameter symbol test conditions values units maximum junction and storage temperature range t j , t stg - 40 to 150 c maximum thermal resistance, junction to case r thjc dc operation 1.5 c/w maximum thermal resistance, junction to ambient r thja 62 typical thermal resistance, case to heatsink r thcs mounting surface, smooth and greased 1.5 approximate weight 2g 0.07 oz. mounting torque minimum 6 (5) kgf cm (lbf in) maximum 12 (10) marking device case style to-220ac full-pak 20ETF10FP 20etf12fp i fm t rr dir dt i rm(rec) q rr t t a t b
document number: 93222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 26-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 3 20ETF10FPpbf, 20etf12fppbf soft recovery series fast soft recovery rectifier diode, 20 a vishay semiconductors fig. 1 - current rating characteristics fig. 2 - current rating characteristics fig. 3 - forward power loss characteristics fig. 4 - forward power loss characteristics fig. 5 - maximum non-re petitive surge current fig. 6 - maximum non-re petitive surge current 150 0 maximum allowable case temperature (c) average forward current (a) 5 100 10 25 120 130 110 15 20 140 conduction angle r thjc (dc) = 0.9 k/w 30 60 90 120 180 ? 150 025 maximum allowable case temperature (c) average forward current (a) 15 530 110 35 120 100 10 20 130 140 r thjc (dc) = 0.9 k/w ? conduction period 30 60 90 120 180 dc 10 0 35 0 maximum average forward power loss (w) average forward current (a) 20 25 25 30 20 10 15 5 5 15 conduction angle t j = 150 c rms limit 180 120 90 60 30 ? 10 0 35 0 maximum average forward power loss (w) average forward current (a) 25 25 15 10 20 5 15 5 20 30 rms limit ? conduction period t j = 150 c 180 120 90 60 30 350 50 1 10 100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) 200 100 150 250 at any rated load condition and with rated v rrm applied following surge. initial t j = 150 c at 60 hz 0.0083 s at 50 hz 0.0100 s 300 150 50 0.01 0.1 1 peak half sine wave forward current (a) pulse train duration (s) 300 100 200 250 350 400 maximum non-repetitive surge current versus pulse train duration. initial t j = 150 c no voltage reapplied rated v rrm reapplied
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93222 4 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 26-jul-10 20ETF10FPpbf, 20etf12fppbf soft recovery series vishay semiconductors fast soft recovery rectifier diode, 20 a fig. 7 - forward voltage drop characteristics fig. 8 - recovery time characteristics, t j = 25 c fig. 9 - recovery time characteristics, t j = 150 c fig. 10 - recovery charge characteristics, t j = 25 c fig. 11 - recovery charge characteristics, t j = 150 c 1000 10 1 0 1.0 2.0 instantaneous forward current (a) instantaneous forward voltage (v) 100 3.0 4.0 t j = 25 c t j = 150 c 0.5 1.5 2.5 3.5 0.7 0.5 0 0 50 100 150 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.1 0.3 t j = 25 c i fm = 10 a i fm = 5 a i fm = 1 a i fm = 30 a i fm = 20 a 0.2 0.4 0.6 1.2 0 0 50 100 150 200 t rr - maximum reverse recovery time (s) di/dt - rate of fall of forward current (a/s) 0.6 0.9 0.3 t j = 150 c i fm = 30 a i fm = 1 a i fm = 20 a i fm = 10 a i fm = 5 a 6 0 0 50 100 150 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 3 1 2 4 5 t j = 25 c i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 0 0 50 100 150 200 q rr - maximum reverse recovery charge (c) di/dt - rate of fall of forward current (a/s) 2 4 t j = 150 c 6 8 10 i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a
document number: 93222 for technical ques tions within your region, please cont act one of the following: www.vishay.com revision: 26-jul-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 5 20ETF10FPpbf, 20etf12fppbf soft recovery series fast soft recovery rectifier diode, 20 a vishay semiconductors fig. 12 - recovery current characteristics, t j = 25 c fig. 13 - recovery current characteristics, t j = 150 c fig. 14 - thermal impedance z thjc characteristics 25 0 0 50 100 150 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 5 15 10 20 t j = 25 c i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 35 20 0 0 50 100 150 200 i rr - maximum reverse recovery current (a) di/dt - rate of fall of forward current (a/s) 5 10 30 t j = 150 c 15 25 i fm = 30 a i fm = 20 a i fm = 10 a i fm = 5 a i fm = 1 a 0.01 1 1 0.0001 0.001 0.01 0.1 square wave pulse duration (s) z thjc - transient thermal impedance (k/w) 0.1 single pulse 20etf.. series steady state value (dc operation) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08
www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 93222 6 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com revision: 26-jul-10 20ETF10FPpbf, 20etf12fppbf soft recovery series vishay semiconductors fast soft recovery rectifier diode, 20 a ordering information table links to related documents dimensions www.vishay.com/doc?95005 part marking information www.vishay.com/doc?95009 1 - current rating (20 = 20 a) 2 - circuit configuration: e = single diode 3 - package: t = to-220ac 4 - type of silicon: f = fast soft recovery rectifier 5 - voltage ratings 6 - full-pak 7 - none = standard production pbf = lead (pb)-free 10 = 1000 v 12 = 1200 v device code 5 1 3 2 4 6 7 20 e t f 12 fp pbf
outline dimensions www.vishay.com vishay semiconductors revision: 20-jul-11 1 document number: 95005 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dimensions in millimeters 5 0.5 3.3 3.1 5 0.5 0.9 0.7 2.54 typ. 2.54 typ. 10.6 10.4 3.7 3.2 7.31 6.91 0.61 0.38 2.85 2.65 2.8 2.6 1.4 1.3 10 4.8 4.6 16.0 15.8 16.4 15.4 (2 places) r 0.7 r 0.5 hole ? 3.4 3.1 typ. 1.15 1.05 13.56 13.05 lead assignments diode s 1 + 2 - cathode 3 - anode conforms to jedec outline to-220 full-pak
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